MONOSTABLE BISTABLE TRANSITION LOGIC ELEMENTS (MOBILES) BASED ON MONOLITHIC INTEGRATION OF RESONANT-TUNNELING DIODES AND FETS

被引:17
作者
CHEN, KJ
AKEYOSHI, T
MAEZAWA, K
机构
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 2B期
关键词
MOBILE; FUNCTIONAL DEVICE; RESONANT TUNNELING; MONOSTABLE BISTABLE TRANSITION; MONOLITHIC INTEGRATION; RTD; FET;
D O I
10.1143/JJAP.34.1199
中图分类号
O59 [应用物理学];
学科分类号
摘要
A MOBILE (monostable-bistable transition logic element) is a functional logic gate employing two negative differential resistance devices connected in-series. This logic gate offers the advantages of multiple inputs and multiple functions. In this paper, a novel approach to achieving MOBILE operation is demonstrated based on monolithic integration of resonant tunneling diodes (RTDs) and field-effect transistors (FETs). In our new integrated structure, an RTD and FETs (one or more) are connected in-parallel. This structure offers several advantages including separate optimization of the RTDs and FETs, and flexible circuit design abilities. For a single-input MOBILE gate, inverter operation is demonstrated as an evidence of monostable-to-bistable transition. For a two-input gate, both NAND and NOR operation is achieved with different control voltages, which implies the possibility of a variable-function logic gate.
引用
收藏
页码:1199 / 1203
页数:5
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