THE SI(111)/MO INTERFACE AS STUDIED WITH SYNCHROTRON RADIATION PHOTOEMISSION AND AUGER-ELECTRON SPECTROSCOPIES

被引:23
作者
ROSSI, G
ABBATI, I
BRAICOVICH, L
LINDAU, I
SPICER, WE
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期
关键词
D O I
10.1116/1.571798
中图分类号
O59 [应用物理学];
学科分类号
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页码:617 / 618
页数:2
相关论文
共 3 条
[1]   NATURE OF THE VALENCE STATES IN SILICON TRANSITION-METAL INTERFACES [J].
ROSSI, G ;
ABBATI, I ;
BRAICOVICH, L ;
LINDAU, I ;
SPICER, WE .
SOLID STATE COMMUNICATIONS, 1981, 39 (02) :195-198
[2]  
ROSSI G, UNPUB
[3]   EXPERIMENTAL AND THEORETICAL BAND-STRUCTURE STUDIES OF REFRACTORY-METAL SILICIDES [J].
WEAVER, JH ;
MORUZZI, VL ;
SCHMIDT, FA .
PHYSICAL REVIEW B, 1981, 23 (06) :2916-2922