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ON THE LOW-TEMPERATURE STATIC AND DYNAMIC PROPERTIES OF HIGH-PERFORMANCE SILICON BIPOLAR-TRANSISTORS

被引：48
作者：
CRESSLER, JD
TANG, DD
JENKINS, KA
LI, GP
YANG, ES
机构：
[1] COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027
[2] WESTERN CONNECTICUT STATE UNIV,DEPT MATH,DANBURY,CT 06810
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 08期
关键词：
D O I：
10.1109/16.30962
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1489 / 1502
页数：14
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