学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
CORRELATION OF SCHOTTKY-BARRIER HEIGHT MEASUREMENTS DETERMINED FROM CAPACITANCE METHOD AND SATURATION CURRENT
被引:9
作者
:
HACKAM, R
论文数:
0
引用数:
0
h-index:
0
HACKAM, R
HARROP, P
论文数:
0
引用数:
0
h-index:
0
HARROP, P
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1972年
/ 15卷
/ 09期
关键词
:
D O I
:
10.1016/0038-1101(72)90148-7
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1031 / &
相关论文
共 5 条
[1]
ELECTRICAL CHARCTERISTICS OF GAASP SCHOTTKY BARRIER DIODES
[J].
NEAMEN, DA
论文数:
0
引用数:
0
h-index:
0
NEAMEN, DA
;
GRANNEMANN, WW
论文数:
0
引用数:
0
h-index:
0
GRANNEMANN, WW
.
SOLID-STATE ELECTRONICS,
1971,
14
(12)
:1319
-+
[2]
EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS
[J].
PADOVANI, FA
论文数:
0
引用数:
0
h-index:
0
PADOVANI, FA
;
SUMNER, GG
论文数:
0
引用数:
0
h-index:
0
SUMNER, GG
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
:3744
-&
[3]
FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF SCHOTTKY BARRIERS ON N-TYPE SILICON
[J].
SAXENA, AN
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Laboratories, Sprague Electric Company, North Adams
SAXENA, AN
.
SURFACE SCIENCE,
1969,
13
(01)
:151
-+
[4]
PHOTOELECTRIC DETERMINATION OF IMAGE FORCE DIELECTRIC CONSTANT FOR HOT ELECTRONS IN SCHOTTKY BARRIERS
[J].
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
;
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
;
KAHNG, D
论文数:
0
引用数:
0
h-index:
0
KAHNG, D
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(08)
:2534
-&
[5]
SZE SM, 1969, PHYSICS SEMICONDUCTO
←
1
→
共 5 条
[1]
ELECTRICAL CHARCTERISTICS OF GAASP SCHOTTKY BARRIER DIODES
[J].
NEAMEN, DA
论文数:
0
引用数:
0
h-index:
0
NEAMEN, DA
;
GRANNEMANN, WW
论文数:
0
引用数:
0
h-index:
0
GRANNEMANN, WW
.
SOLID-STATE ELECTRONICS,
1971,
14
(12)
:1319
-+
[2]
EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS
[J].
PADOVANI, FA
论文数:
0
引用数:
0
h-index:
0
PADOVANI, FA
;
SUMNER, GG
论文数:
0
引用数:
0
h-index:
0
SUMNER, GG
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
:3744
-&
[3]
FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF SCHOTTKY BARRIERS ON N-TYPE SILICON
[J].
SAXENA, AN
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Laboratories, Sprague Electric Company, North Adams
SAXENA, AN
.
SURFACE SCIENCE,
1969,
13
(01)
:151
-+
[4]
PHOTOELECTRIC DETERMINATION OF IMAGE FORCE DIELECTRIC CONSTANT FOR HOT ELECTRONS IN SCHOTTKY BARRIERS
[J].
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
;
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
;
KAHNG, D
论文数:
0
引用数:
0
h-index:
0
KAHNG, D
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(08)
:2534
-&
[5]
SZE SM, 1969, PHYSICS SEMICONDUCTO
←
1
→