CORRELATION OF SCHOTTKY-BARRIER HEIGHT MEASUREMENTS DETERMINED FROM CAPACITANCE METHOD AND SATURATION CURRENT

被引:9
作者
HACKAM, R
HARROP, P
机构
关键词
D O I
10.1016/0038-1101(72)90148-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1031 / &
相关论文
共 5 条
[1]   ELECTRICAL CHARCTERISTICS OF GAASP SCHOTTKY BARRIER DIODES [J].
NEAMEN, DA ;
GRANNEMANN, WW .
SOLID-STATE ELECTRONICS, 1971, 14 (12) :1319-+
[2]   EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS [J].
PADOVANI, FA ;
SUMNER, GG .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3744-&
[3]   FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF SCHOTTKY BARRIERS ON N-TYPE SILICON [J].
SAXENA, AN .
SURFACE SCIENCE, 1969, 13 (01) :151-+
[4]   PHOTOELECTRIC DETERMINATION OF IMAGE FORCE DIELECTRIC CONSTANT FOR HOT ELECTRONS IN SCHOTTKY BARRIERS [J].
SZE, SM ;
CROWELL, CR ;
KAHNG, D .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) :2534-&
[5]  
SZE SM, 1969, PHYSICS SEMICONDUCTO