ANNEALING AND CHARGING OF SLOW AND FAST STATES IN METAL-TUNNEL OXIDE-SILICON DIODES MEASURED USING CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE TECHNIQUES

被引：11

作者：

ANDERSSON, MO

LUNDGREN, P

ENGSTROM, O

FARMER, KR

机构：

[1] Dept. of Solid State Electronics, Chalmers Univ. of Technology

[2] Dept. of Physics, New Jersey Inst. of Technology, Univ. Heights, Newark

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90165-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Capacitance-voltage (C-V) techniques are used to obtain new information on the effects of post-metallization annealing and charging of ultra-thin metal-tunnel oxide-silicon (MTOS) diodes, which we have previously characterized mainly using variations in the tunnel current density. The interrelationships between the annealing and charging and the nature of the defects are further illuminated in this work because of the ability of the C-V techniques to distinguish between charges contained in slow and fast states.

引用

页码：235 / 238

页数：4

共 8 条

[1]

Farmer, Andersson, Engstrom, Appl. Phys. Lett., 58, (1991)

[2]

Farmer, Andersson, Engstrom, Appl. Phys. Lett., 60, (1992)

[3]

Andersson, Farmer, Engstrom, Proc. INFOS '91, (1991)

[4]

Andersson, Farmer, Engstrom, J. Appl. Phys., 71, (1992)

[5]

Farmer, Lundgren, Andersson, Engstrom, Amorphous Insulating Thin Films, (1992)

[6]

Lundgren, Andersson, Farmer, Post-metallization annealing of metal-tunnel oxide-silicon diodes, (1993)

[7]

Ricco, Olivo, Nguyen, Kuan, Ferriani, IEEE T E D, 35, (1988)

[8]

Kar, Dahlke, Solid-State Electronics, 15, (1972)

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