STRUCTURAL AND ELECTRONIC CHARACTERIZATION OF BETA-SIC FILMS ON SI GROWN FROM MONO-METHYLSILANE PRECURSORS

This paper presents the results of an in-depth investigation into the chemical vapour deposition (CVD) growth of beta-SiC on Si from H3Si-CH3 precursors. In agreement with previous work, we find an onset of CVD growth at substrate temperatures in the order of 750-800 degrees C. Higher temperatures lead to exponentially increasing growth rates until diffusion limitations set in at about 1000 degrees C. The highest quality films, with structural characteristics typical of single-crystal material, were deposited at about 1050 degrees C. Substrate pretreatments, except for a pre-deposition HF dip, had surprisingly little influence on the crystal quality. Films deposited at substrate temperatures lower than 1000 degrees C exhibited substantially broader IR absorption peaks and a higher degree of misorientation than those deposited at high temperature.