ION-IMPLANTATION AND ACTIVATION BEHAVIOR OF SI IN MBE-GROWN GAAS ON SI SUBSTRATES FOR GAAS-MESFETS

被引：12

作者：

CHAND, N

REN, F

PEARTON, SJ

SHAH, NJ

CHO, AY

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 05期

关键词：

D O I：

10.1109/EDL.1987.26597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：185 / 187

页数：3

共 6 条

[1] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J].

CHAND, N ;

PEOPLE, R ;

BAIOCCHI, FA ;

WECHT, KW ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :815-817

[2]

CHAND N, 1987, IN PRESS J VAC SCI B

[3] GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

MASSELINK, WT ;

KLEM, J ;

HENDERSON, T ;

MCGLINN, TC ;

KLEIN, MV ;

MORKOC, H ;

MAZUR, JH ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :374-381

[4] A DC AND MICROWAVE COMPARISON OF GAAS-MESFETS ON GAAS AND SI SUBSTRATES [J].

FISCHER, RJ ;

CHAND, N ;

KOPP, WF ;

PENG, CK ;

MORKOC, H ;

GLEASON, KR ;

SCHEITLIN, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) :206-213

[5]

SCHICHIJO M, 1986, 13TH INT S GAAS REL

[6]

TUYL RLV, 1982, IEEE T ELECTRON DEVI, V29, P1031

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