EFFECT OF SODIUM SULFIDE TREATMENT ON BAND BENDING IN GAAS

被引：86

作者：

BESSER, RS ^{[1
]}

HELMS, CR ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 20期

关键词：

D O I：

10.1063/1.99024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1707 / 1709

页数：3

共 10 条

[1]

BESSER RS, UNPUB

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HASAN, E ;

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ALBERT, M .

APPLIED PHYSICS LETTERS, 1987, 50 (14) :912-914

[3]

HASEGAWA H, 1988, IN PRESS J VAC SCI A

[4] STUDY OF THE STRUCTURE AND PROPERTIES OF THE TI/GAAS INTERFACE [J].

KNIFFIN, M ;

HELMS, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1511-1515

[5]

MEINERS LG, 1985, PHYSICS CHEM 3 5 COM, pCH4

[6] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION [J].

SANDROFF, CJ ;

NOTTENBURG, RN ;

BISCHOFF, JC ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :33-35

[7] EFFECTS OF PASSIVATING IONIC FILMS ON THE PHOTOLUMINESCENCE PROPERTIES OF GAAS [J].

SKROMME, BJ ;

SANDROFF, CJ ;

YABLONOVITCH, E ;

GMITTER, T .

APPLIED PHYSICS LETTERS, 1987, 51 (24) :2022-2024

[8]

SPICER WE, 1987, UNPUB INT C SOLID FI

[9]

SUNDARAM LMG, 1985, 1985 EL SOC M LAS VE, P271

[10] DEGRADATION OF PHOTOLUMINESCENCE INTENSITY CAUSED BY EXCITATION-ENHANCED OXIDATION OF GAAS SURFACES [J].

SUZUKI, T ;

OGAWA, M .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :473-475

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