STRESS-INDUCED OPTICAL-ACTIVITY IN THE ZINCBLENDE-TYPE SEMICONDUCTORS

被引：24

作者：

ETCHEGOIN, P

CARDONA, M

机构：

[1] Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 82卷 / 09期

关键词：

D O I：

10.1016/0038-1098(92)90056-F

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The point group of zincblende-type semiconductors is T(d). The 6-sigma(d) reflection planes present in this group forbid optical rotatory power (circular birefringence and dichroism)[1]. Under static uniaxial stress along one of the S4 axis T(d) is reduced to D2d and circular birefringence and dichroism become allowed [2]. In this paper we present a microscopic mechanism for the optical activity of the zincblende-type semiconductors under stress using transitions with finite k -> transfer near the GAMMA-point. We also show experimental data for GaAs.

引用

页码：655 / 659

页数：5

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