MULTIPLEX HOLOGRAPHY IN STRONTIUM BARIUM NIOBATE WITH APPLIED FIELD

被引:34
作者
FORD, JE
MA, J
FAINMAN, Y
LEE, SH
TAKETOMI, Y
BIZE, D
NEURGAONKAR, RR
机构
[1] MATSUSHITA ELECT IND CO LTD, MORIGUCHI, OSAKA 570, JAPAN
[2] CTR ETUD & RECH TOULOUSE, F-31055 TOULOUSE, FRANCE
[3] ROCKWELL INT SCI CTR, THOUSAND OAKS, CA 91360 USA
关键词
D O I
10.1364/JOSAA.9.001183
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We characterize the performance of photorefractive Sr0.6Ba0.4Nb2O6 under an externally applied voltage. We compared the field dependences of the pin coefficient, response time, sensitivity, and diffraction efficiency with predictions of Kukhtarev's solution [Sov. Tech. Phys. Lett. 2, 438 (1976)] for two-wave interaction, using material parameters obtained at zero voltage. Plane-wave holograms were superimposed in the crystal with angular multiplexing. The hologram capacity (or minimum diffraction efficiency) increased by an order of magnitude with a 15-kV/cm applied field.
引用
收藏
页码:1183 / 1192
页数:10
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