OHMIC CONTACTS TO P-TYPE 6H-SILICON CARBIDE

被引：17

作者：

NENNEWITZ, O

SPIESS, L

BRETERNITZ, V

机构：

[1] Institut für Werkstoffe, Technische Universität Ilmenau, 98684 Ilmenau

来源：

APPLIED SURFACE SCIENCE | 1995年 / 91卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(95)00144-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An Al/Ti-ohmic contact to p-type 6H-SiC is described. Specific contact resistances were measured using the linear transmission line method [1] and varied between approximately 5 x 10(-4) and 5 X 10(-3) Omega . cm(2) at room temperature. CV measurements of as-deposited contacts and those annealed at different temperatures will be presented.

引用

页码：347 / 351

页数：5