ANALYSIS OF ASTIGMATISM IN HIGH-POWER SEMICONDUCTOR-LASERS

被引：3

作者：

OHTOSHI, T

YAMAGUCHI, K

CHINONE, N

机构：

[1] Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1987年 / 26卷 / 01期

关键词：

LASER BEAMS - Analysis - WAVEGUIDES; OPTICAL;

D O I：

10.1143/JJAP.26.L68

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A beam profile near the facet of high-power semiconductor lasers is precisely analyzed using two-dimensional computer simulation. Astigmatism and its optical-power dependence can be accurately predicted in this way. Lasers with effective three-layer slab waveguides (i. e. single-step-index waveguides) in the lateral direction have two beam waists. That is, they have a rather large astigmatic distance that depends on the power. To realize high-power lasers with a small astigmatic distance that is relatively independent of output power, waveguides with a graded-index profile or multi-step-index profile are needed.

引用

页码：L68 / L70

页数：3