LIMITATIONS TO PERFORMANCE OF PLANAR GUNN EFFECT DEVICES

Planar Gunn effect devices have been constructed using a number of surface electrode configurations. The performance of these has generally been poor, with low output powers and efficiencies together with poor frequency stability. A major limitation in these devices is imposed by breakdown on the exposed surface of the epitaxial gallium arsenide, such that the field that may be applied is less than that required for optimum performance. The breakdown mechanism has been investigated, and has been found to take three possible forms. These are discussed in relation to the design and operation of planar devices, for various electrode configurations and material parameters. Results achieved with planar structures are presented with reference to the device technology and performance. © 1969.