THICKNESS UNIFORMITY OF GAAS LAYERS GROWN BY ELECTROEPITAXY

被引：43

作者：

JASTRZEBSKI, L

IMAMURA, Y

GATOS, HC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 07期

关键词：

D O I：

10.1149/1.2131637

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1140 / 1146

页数：7

共 16 条

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[8] CURRENT-CONTROLLED GROWTH, SEGREGATION AND AMPHOTERIC BEHAVIOR OF SI IN GAAS FROM SI-DOPED SOLUTIONS [J].

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[9]

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[10] CRYSTAL-GROWTH FROM MELT UNDER DESTABILIZING THERMAL GRADIENTS [J].

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