A CHEMICAL METHOD FOR PREPARING COPPER IODIDE THIN-FILMS

被引：15

作者：

CHAUDHURI, TK

BASU, PK

PATRA, AB

SARASWAT, RS

ACHARYA, HN

机构：

[1] Thermoelectric and Allied Phenomena Laboratory, Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 02期

关键词：

Chemical method; Conducting layer; Cu[!sub]2[!/sub]S; Thin film; ϒ-Cul;

D O I：

10.1143/JJAP.29.L352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A chemical method for preparing CuI thin films by iodination of solution grown Cu2S films is described. X-ray characterization identifies γ-CuI and suggest that the films are polycrystalline in nature. SEM reveals a granular film morphology. Optical studies show that the band gap of the material is 2.93 eV. The sheet resistance of the films is in the range 1 to 3 k Ω/sq. © 1990 IOP Publishing Ltd.

引用

页码：L352 / L354

页数：3

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