A SILICON BASED TECHNOLOGY FOR MONOLITHIC INTEGRATION OF WAVE-GUIDES AND VLSI CMOS CIRCUITS

被引:2
作者
HILLERINGMANN, U
KNOSPE, K
HEITE, C
SCHUMACHER, K
GOSER, K
机构
[1] University of Dortmung, Department of Electrical Engineering, D-4600 Dortmund 50
关键词
D O I
10.1016/0167-9317(91)90231-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A submicron n-well SWAMI-LOCOS CMOS process on silicon substrate has been used for monolithic integration of an electrooptical system consisting of waveguides, photodetectors and VLSI CMOS circuits. The optical films have been deposited as SiON films on SiO2 buffer layers by LPCVD or PECVD technique, waveguides were delineated by plasma etching of the SiON film.
引用
收藏
页码:289 / 292
页数:4
相关论文
共 1 条
[1]  
Kahng, Shankoff, Sheng, Haszko, J. Electrochemical Soc., 127, pp. 2468-2471, (1980)