MONOLITHIC INTEGRATION OF AN ALGAAS/GAAS SURFACE EMITTING LASER DIODE AND A PHOTODETECTOR

被引：3

作者：

CHEN, CH

LEE, SC

机构：

[1] Department of Electrical Engineering, National Taiwan University, Taipei

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 27期

关键词：

D O I：

10.1063/1.105642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The monolithic integration of an AlGaAs/GaAs surface emitting laser diode and a photodiode has been achieved successfully by using one step liquid phase epitaxial growth. Only a single laser beam is emitted vertically from the substrate through the nearby 45-degrees reflector. The highest output power achieved is 22 mW and the threshold current density is 1.92 kA/cm2. The ratio between photocurrent of the detector and the output power of laser diode is 0.32-mu-A/mW for the type I device and 1-mu-A/mW for the type II device.

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页码：3592 / 3594

页数：3

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