HIGH-FREQUENCY ATTENUATED TOTAL INTERNAL-REFLECTION LIGHT-MODULATOR

被引:59
作者
SOLGAARD, O [1 ]
HO, F [1 ]
THACKARA, JI [1 ]
BLOOM, DM [1 ]
机构
[1] STANFORD UNIV,EL GINZTON LAB,STANFORD,CA 94305
关键词
D O I
10.1063/1.108161
中图分类号
O59 [应用物理学];
学科分类号
摘要
The modulation efficiency and bandwidth limitations of a new type of light modulator, the attenuated total internal reflection modulator (ATRM), are described. The ATRM is based on coupling a light beam to a surface plasmon wave, and its fabrication is compatible with GaAs integrated circuit technology. We demonstrate modulation to 22 GHz (the extrapolated 1.5 dB optical modulation bandwidth is 26 GHz) and show that devices with high modulation index can be built using existing materials.
引用
收藏
页码:2500 / 2502
页数:3
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