REDUCTION OF CARRIER CONCENTRATION IN PB1-XSNXTE BY CD DIFFUSION AND DOPING WITH ZN

被引：14

作者：

LINDEN, KJ ^{[1
]}

机构：

[1] RAYTHEON CO,INFRARED & OPTICAL RES LAB,SPECIAL MICROWAVE DEVICES OPERATION,WALTHAM,MA 02154

来源：

关键词：

D O I：

10.1149/1.2403645

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1131 / 1134

页数：4

共 8 条

[1] HIGH MOBILITY N-TYPE PB0.83SN0.17TE SINGLE CRYSTALS [J].

ANTCLIFF.GA ;

WROBEL, JS .

[2]

BREBRICK RF, 1966, PROGR SOLID STATE CH, V3

[3]

CALAWA AR, 1968, T METALL SOC AIME, V242, P374

[4]

HARMAN TC, 1971, PHYSICS SEMIMETALS N

[5]

Melngailis I., 1970, SEMICONDUCTORS SEMIM, V5

[6]

RAVICH YI, 1970, SEMICONDUCING LEAD C

[7]

van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[8] HIGH APPARENT MOBILITY IN INHOMOGENEOUS SEMICONDUCTORS [J].

WOLFE, CM ;

STILLMAN, GE ;

ROSSI, JA .