OXYGEN EVOLUTION ON SEMICONDUCTING TIO2

被引:249
作者
BODDY, PJ
机构
[1] Bell Telephone Laboratories, Incorporated, Murray Hill, New Jersey
关键词
D O I
10.1149/1.2411080
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Semiconducting n-type TiO2 evolves oxygen under anodic polarization despite the presence of an exhaustion layer. Addition to the solution of species more oxidizable than water causes no increase in current at a given potential, hence electron emission over the surface barrier is unimportant. The data may be interpreted in terms of electron tunneling from oxide ions in the crystal surface as the rate-determining step followed by faster electrochemical processes. Implications for electrolytic rectification are discussed. © 1968, The Electrochemical Society, Inc. All rights reserved.
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页码:199 / &
相关论文
共 12 条
[1]  
BODDY PJ, TO BE PUBLISHED
[2]   THE INTERFACE BETWEEN GERMANIUM AND A PURIFIED NEUTRAL ELECTROLYTE [J].
BRATTAIN, WH ;
BODDY, PJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (07) :574-582
[3]   INFRARED ABSORPTION OF REDUCED RUTILE TIO2 SINGLE CRYSTALS [J].
CRONEMEYER, DC .
PHYSICAL REVIEW, 1959, 113 (05) :1222-1226
[4]  
FRANZ W, 1956, HANDBUCH PHYSIK, V17
[5]   ELECTROMODULATION OF OPTICAL CONSTANTS OF RUTILE IN UV [J].
FROVA, A ;
BODDY, PJ ;
CHEN, YS .
PHYSICAL REVIEW, 1967, 157 (03) :700-&
[6]  
MOTT NF, 1939, P ROY SOC LONDON, VA171, P27
[7]   HYDROGEN DOPING AS THE MECHANISM OF ELECTROLYTIC RECTIFICATION [J].
SCHMIDT, PF .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (02) :278-279
[8]   For the theory of semiconductor junction and peak rectifier . [J].
Schottky, W. .
ZEITSCHRIFT FUR PHYSIK, 1939, 113 (5-6) :367-414
[9]  
VANGEEL WC, 1950, PHILIPS RES REP, V5, P461
[10]   ON RECTIFIERS [J].
VANGEEL, WC .
PHYSICA, 1951, 17 (07) :761-776