OPTICAL-PROPERTIES OF AMORPHOUS AND CRYSTALLINE SB2S3 THIN-FILMS

被引:154
作者
GHOSH, C
VARMA, BP
机构
[1] Optoelectronics Section, Bhabha Atomic Research Centre, Bombay, 400 085, Trombay
关键词
D O I
10.1016/0040-6090(79)90347-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The optical constants of amorphous thin films of Sb2S3 prepared by vacuum evaporation were determined. After deposition the films were crystallized by baking in a vacuum and their optical constants were re-determined. The amorphous and crystalline states of the films were determined by means of transmission electron microscopy. The amorphous material shows the exponential absorption tail characteristic of most amorphous materials. At higher photon energies near the absorption edge a linear dependence of (αE) 1 2 on photon energy is observed from which the extrapolated optical gap is found to be 1.7 eV. The optical constants in the amorphous films are rather structureless but on crystallization several structures are observed in ε2 at energies of 1.88, 2.88, 3.48, 3.86 and 5.25 eV. The band gap in the crystalline material is 1.88 eV and is considered to be direct. On crystallization the magnitudes of the optical constants ε2 and n increase to a great extent. The establishment of long range order in the material is likely to increase the weaker bonding by the chalcogen p electrons. This would probably increase the effective number of electron contributing to interband optical transitions and give rise to the observed change in optical properties. © 1979.
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页码:61 / 65
页数:5
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