Anomalies of the implanted dopant diffusion in Si often cannot be interpreted unambiguously.1 The presence of free vacancies in the layer results in the essential enhancement of boron diffusion in Si.1 There is a temperature for each semiconductor material when the probability for any defect associations to exist in the implanted layer (IL) during implantation is extremely small and non-equilibrium point defects only exist in it. We consider such a defect state as a physical criterion for applying the term of High Temperature Ion Implantation (HTII). Application of the HTI1 technique enabled us to obtain the2deep penetration of the implanted dopant. The boron penetration (E= 40 keV,j= 40 °A/cm2, D= 1 - 10162 ion/ cm2) ranged in depth up to 4.5 °m at Tir= 1150°C. Then the surface density of boron atoms in the electrically active states is 10 times higher as compared to the Tir= 850°C case, the concentration of boron atoms in the IL does not exceed the solid solubility and the IL possesses the perfect crystal structure after the HTII. So the HTII technique is the one-step regime which replaces an implantation followed by post-implantation annealing. It can be applied to the controlled and monitored production of the inverse layers in the silicon ranging up to 4.5 µm with the concentration of holes which corresponds to the dopant solid solubility, whereas high level of the dopant activation and defect-free layers are obtained. © 1991, Taylor & Francis Group, LLC. All rights reserved.
