ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN METAL, AND SUPPRESSION OF CARBON INCORPORATION BY CODEPOSITION OF PLATINUM

被引：11

作者：

NIEMER, B ^{[1
]}

ZINN, AA ^{[1
]}

STOVALL, WK ^{[1
]}

GEE, PE ^{[1
]}

HICKS, RF ^{[1
]}

KAESZ, HD ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT CHEM ENGN,LOS ANGELES,CA 90024

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 15期

关键词：

D O I：

10.1063/1.108402

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly reflecting, amorphous, thin films of tungsten are obtained by the decomposition of bis-cyclopentadienyltungstendihydride, (eta-C5H5)2WH2, in 1 atm of hydrogen at 350-degrees-C. Auger depth profiling reveals that the carbon and oxygen content of the films are 25.1 and 3.1 at. %, respectively. Simultaneous chemical vapor deposition of tungsten with a small amount of platinum reduces the carbon and oxygen content of the film to 5.3 and 1.8 at. %. The platinum is deposited from cyclopentadienylplatinumtrimethyl, (eta-C5H5)Pt(CH3)3, and its concentration in the film is 3.3%. Annealing at 750-degrees-C in hydrogen converts the tungsten into a polycrystalline deposit which exhibits an x-ray diffraction pattern characteristic of the metal. The sheet resistivities of the amorphous films are 52 +/- 4 muOMEGA cm.

引用

页码：1793 / 1795

页数：3

共 23 条

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