PERFORMANCE ON TEST BEAM OF THE L3 DOUBLE-SIDED SILICON MICROSTRIP DETECTOR

被引：4

作者：

ADAM, A

ADRIANI, O

AHLEN, S

AMBROSI, G

BABUCCI, E

BASCHIROTTO, A

BATTISTON, R

BY, A

BENCZE, GL

BERTUCCI, B

BIASINI, M

BILEI, GM

BOBBINK, GJ

BOSETTI, M

BROOKS, ML

BUSENITZ, J

BURGER, WJ

CAMPS, C

CARIA, M

CASTELLINI, G

CHECCUCCI, B

CHEN, A

COAN, TE

COMMICHAU, V

DIBITONTO, D

DUINKER, P

EASO, S

EXTERMANN, P

FIANDRINI, E

GOUGAS, A

HANGARTER, K

HAUVILLER, C

HERVE, A

HU, G

JOSA, I

KAPUSTINSKI, JS

KIM, D

KINNISON, WW

KRASTEV, VR

LANDI, G

LEBEAU, M

LECOMTE, P

LEE, DM

LEISTE, R

LIN, WT

LOHMANN, W

MARIN, A

MASSETTI, R

MILLS, GB

NOWAK, H

机构：

[1] UNIV PERUGIA,INFN,I-06100 PERUGIA,ITALY

[2] RHEIN WESTFAL TH AACHEN,INST PHYS 3,W-5100 AACHEN,GERMANY

[3] UNIV ALABAMA,TUSCALOOSA,AL 35401

[4] BOSTON UNIV,BOSTON,MA 02215

[5] UNIV FLORENCE,INFN,I-50121 FLORENCE,ITALY

[6] IROE,INFN,FLORENCE,ITALY

[7] SWISS FED INST TECHNOL,CH-8006 ZURICH,SWITZERLAND

[8] UNIV GENEVA,CH-1211 GENEVA 4,SWITZERLAND

[9] NIKHEF,AMSTERDAM,NETHERLANDS

[10] UNIV MILAN,INFN,I-20122 MILAN,ITALY

[11] NCU,CHUNGLI,TAIWAN

[12] DESY,ZEUTHEN,GERMANY

[13] NATL TSING HUA UNIV,HSINCHU 300,TAIWAN

[14] TECH UNIV BUDAPEST,INST PHYS,H-1521 BUDAPEST,HUNGARY

[15] CERN,CH-1211 GENEVA 23,SWITZERLAND

[16] UNIV LAUSANNE,CH-1000 LAUSANNE 17,SWITZERLAND

[17] JOHNS HOPKINS UNIV,BALTIMORE,MD 21218

[18] RMKI,BUDAPEST,HUNGARY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 348卷 / 2-3期

关键词：

Amplifiers (electronic) - Ion implantation - Microstrip devices - Particle beams - Readout systems - Signal to noise ratio - VLSI circuits;

D O I：

10.1016/0168-9002(94)90775-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Two modules of the L3 Silicon Microvertex Detector (SMD) have been tested on beam. The active area of the modules consists of double sided silicon microstrip detectors; the implantation pitch is 25 mum and 50 mum in the junction and ohmic side, respectively. The detectors are read out by a VLSI radiation hard amplifier (SVX-H). The position resolution, with a readout pitch of 50 mum and 200 mum for the two sides, is determined to be 7.0 mum and 14.3 mum. A signal to noise ratio greater-than-or-equal-to 16 and a detection efficiency greater-than-or-equal-to 99% are measured for both sides.

引用

页码：436 / 439

页数：4

共 10 条

[1]

ADRIANI O, 1993, NUCL PHYS B S, V32, P480

[2]

ADRIANI O, 1994, 3RD LOND C POS SENS, V348, P431

[3]

AMBROSI G, 1993, 3RD LOND C POS SENS

[4]

BAGLIESI, 1988, NUCL INSTRUM METH A, V277, P147

[5]

BERTUCCI B, 1993, 5TH TOP SEM EXPT APP

[6]

COMMICHAU V, 1992, USERS MANUAL DRP

[7]

DIBITONTO D, UNPUB NUCL INSTR MET

[8]

MASSETTI R, 1993, THESIS U PERUGIA ITA

[9]

TONISCH F, 1993, DESY IFH ZEUTHEN

[10]

WEGMANN J, 1993, THESIS U JENA

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