FABRICATION OF AN INGAAS SINGLE-QUANTUM-WELL CIRCULAR RING LASER BY DIRECT LASER PATTERNING

被引：14

作者：

SHIH, MC

HU, MH

FREILER, MB

LEVY, M

SCARMOZZINO, R

OSGOOD, RM

TAO, IW

WANG, WI

机构：

[1] Microelectronics Sciences Laboratories, Columbia University, New York

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 20期

关键词：

D O I：

10.1063/1.113099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fabrication of single quantum well (SQW) ridge waveguide ring laser in strained InGaAs is described which utilizes direct-write laser lithography followed by cryogenic UV laser-assisted etching. The laser has a threshold current of 270 mA and emits ∼14 mW of single-frequency output. © 1995 American Institute of Physics.

引用

页码：2608 / 2610

页数：3

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