ZERO-PHONON TRANSITION OF FREE-ELECTRONS TO BOUND HOLES IN HEAVILY GALLIUM-DOPED SILICON

被引：4

作者：

DAI, R

UEBBING, R

LINNEBACH, R

机构：

来源：

JOURNAL OF LUMINESCENCE | 1982年 / 26卷 / 03期

关键词：

D O I：

10.1016/0022-2313(82)90051-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：233 / 238

页数：6

共 11 条

[1] TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON [J].

BLUDAU, W ;

ONTON, A ;

HEINKE, W .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1846-1848

[2] IMPACT IONIZATION OF EXCITONS IN GAAS [J].

BLUDAU, W ;

WAGNER, E .

PHYSICAL REVIEW B, 1976, 13 (12) :5410-5414

[3] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS [J].

BOGARDUS, EH ;

BEBB, HB .

PHYSICAL REVIEW, 1968, 176 (03) :993-&

[4]

COLLET J, 1977, SOLID STATE COMMUN, V16, P775

[5] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].

DEAN, PJ ;

HAYNES, JR ;

FLOOD, WF .

PHYSICAL REVIEW, 1967, 161 (03) :711-&

[6]

LINNEBACH R, UNPUB J CRYSTAL GROW

[7]

PARSONS RR, 1977, CAN J PHYS, V36, P814

[8]

POKROVSKII YE, 1964, FIZ TVERD TELA, V6, P19

[9]

POKROVSKII YE, 1963, FIZ TVERD TELA, V5, P1880

[10]

ROSTWOROWSKII JA, 1976, SOLID STATE COMMUN, V15, P93

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