THE PN-CCD ON-CHIP ELECTRONICS

被引:84
作者
PINOTTI, E
BRAUNINGER, H
FINDEIS, N
GORKE, H
HAUFF, D
HOLL, P
KEMMER, J
LECHNER, P
LUTZ, G
KINK, W
MEIDINGER, N
METZNER, G
PREDEHL, P
REPPIN, C
STRUDER, L
TRUMPER, J
VONZANTHIER, C
KENDZIORRA, E
STAUBERT, R
RADEKA, V
REHAK, P
BERTUCCIO, G
GATTI, E
LONGONI, A
PULLIA, A
SAMPIETRO, M
机构
[1] MPI HALBLEITERLAB,W-8000 MUNICH 60,GERMANY
[2] UNIV TUBINGEN,INST ASTRON,W-7400 TUBINGEN 1,GERMANY
[3] BROOKHAVEN NATL LAB,UPTON,NY 11973
[4] POLITECN MILAN,I-20133 MILAN,ITALY
关键词
D O I
10.1016/0168-9002(93)90337-H
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A new pn-CCD with an activa area of 3 x 1 cm2 was recently fabricated for ESA's X-ray Multi Mirror Mission (XMM). The front-end electronics has been integrated on the same chip as the detector, and its noise behaviour was investigated. X-rays from a Fe-55 source have been used for the absolute calibration. The measured electronic Equivalent Noise Charge (ENC) of the on-chip amplifier was 8.8 e- at room temperature and 2.2 e - at the CCD operating temperature of 150 K. The improvements with respect to the last version with noise figures of 4.8 e- (at 150 K) are due to the reduction of the total input capacitance by a factor of 1.6, the improvement of the transistor transconductance by a factor of 2, and the reduction of 1/f noise because of the different p-well implant with a better thermal annealing.
引用
收藏
页码:85 / 91
页数:7
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