CARRIER TEMPERATURE AND SPECTRAL HOLEBURNING DYNAMICS IN INGAASP QUANTUM-WELL LASER-AMPLIFIERS

被引：17

作者：

WILLATZEN, M ^{[1
]}

MARK, J ^{[1
]}

MORK, J ^{[1
]}

SELTZER, CP ^{[1
]}

机构：

[1] BT LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.111545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An experimental and theoretical study of ultrafast gain dynamics in InGaAsP multiple quantum well laser amplifiers is presented. A transition from pump-induced heating of the carriers to pump-induced cooling is observed by change of the pump-probe wavelength. The experimental results are in good agreement with a theoretical model including the effects of carrier temperature dynamics, spectral holeburning, and two-photon absorption.

引用

收藏

页码：143 / 145

页数：3

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