STOICHIOMETRY OF TANTALUM OXIDE-FILMS PREPARED BY KRF EXCIMER LASER-INDUCED CHEMICAL-VAPOR-DEPOSITION

被引:42
作者
IMAI, Y
WATANABE, A
MUKAIDA, M
OSATO, K
TSUNODA, T
KAMEYAMA, T
FUKUDA, K
机构
[1] Department of Inorganic Materials, National Institute of Materials and Chemical Research, Tsukuba, Ibaraki, 305
关键词
CHEMICAL VAPOR DEPOSITION; OXIDES; TANTALUM; X-RAY PHOTOELECTRON SPECTROSCOPY;
D O I
10.1016/S0040-6090(95)06510-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tantalum oxide films have been prepared by photolysis of Ta(OCP3)(5) vapor under KrF excimer laser irradiation at various laser fluences (50-450 J m(-2)). The composition and stoichiometry of the films were determined by X-ray photoelectron spectroscopy (XPS). The variation of the shape of the Ta 4f XPS peak for surface erosion of samples by argon-ion etching indicated that films were deficient in oxygen atoms compared with the composition of the stoichiometric Ta2O5, though the X-ray diffraction pattern of films obtained at higher laser fluences (more than 300 J m(-2)) corresponded to that of the beta-Ta2O5 phase. The deficiency in oxygen increased with increasing laser fluence to reach the maximum value of about 20% in the laser fluence range 150 J m(-2) to 250 J m(-2) and then decreased. The carbon content in the films was less than the background contamination level (a few %) under the experimental conditions investigated. Various possible reasons for the laser fluence effect on the stoichiometry of films are discussed.
引用
收藏
页码:76 / 82
页数:7
相关论文
共 18 条
[1]   2-PHOTON PROCESSES IN DEFECT FORMATION BY EXCIMER LASERS IN SYNTHETIC SILICA GLASS [J].
ARAI, K ;
IMAI, H ;
HOSONO, H ;
ABE, Y ;
IMAGAWA, H .
APPLIED PHYSICS LETTERS, 1988, 53 (20) :1891-1893
[2]  
BRESLOW R, 1965, ORGANIC REACTION MEC, P204
[3]   A PHOTOTROPIC CRYSTAL-GROWTH OF BETA-TA2O5 BY KRF LASER PHOTOLYSIS OF TA(OCH3)5 [J].
IMAI, Y ;
WATANABE, A ;
OSATO, K ;
KAMEYAMA, T ;
FUKUDA, K .
CHEMISTRY LETTERS, 1990, (02) :177-180
[4]  
ISHIKAWA I, 1989, CORROS ENG, V38, P619
[5]   LEAKAGE-CURRENT INCREASE IN AMORPHOUS TA2O5 FILMS DUE TO PINHOLE GROWTH DURING ANNEALING BELOW 600-DEGREES-C [J].
KIMURA, S ;
NISHIOKA, Y ;
SHINTANI, A ;
MUKAI, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) :2414-2418
[6]   ON THE DEFECT STRUCTURE OF TA2O5 [J].
KOFSTAD, P .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (09) :776-781
[7]   STUDY OF CORE ELECTRON BINDING-ENERGIES IN SOME GROUP IIIA, VB, AND VIB COMPOUNDS [J].
MCGUIRE, GE ;
SCHWEITZ.GK ;
CARLSON, TA .
INORGANIC CHEMISTRY, 1973, 12 (10) :2450-2453
[8]  
MUKAIDA M, 1993, THIN SOLID FILMS, V232, P680
[9]   DIELECTRIC CHARACTERISTICS OF DOUBLE-LAYER STRUCTURE OF EXTREMELY THIN TA2O5/SIO2 ON SI [J].
NISHIOKA, Y ;
KIMURA, S ;
SHINRIKI, H ;
MUKAI, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) :410-415
[10]   EARLY STAGE OF SILICON OXIDATION STUDIED BY INSITU X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
TAKAKURA, M ;
OGURA, T ;
HAYASHI, T ;
HIROSE, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2213-L2215