DETERMINATION OF THE INTERBAND AND THE FREE CARRIER ABSORPTION CONSTANTS IN SILICON AT HIGH-LEVEL PHOTOINJECTION

被引：47

作者：

SVANTESSON, KG

机构：

[1] Phys. Dept., Royal Inst. of Technol.

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1979年 / 12卷 / 03期

关键词：

D O I：

10.1088/0022-3727/12/3/012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Describes and experimental method together with an analysis of the experimental data, which makes it possible to determine the interband absorption coefficient, the free carrier absorption cross-section and the surface reflectivity in the same experimental set-up. The experiments were performed on samples of pure silicon at T=294K using a pulsed Nd-YAG laser, which gave pulses of 10-15 ns duration at lambda =1.06 mu m. The maximum carrier concentration achieved was about 3*1019 cm-3. Effects of laser beam inhomogeneities are also discussed and included in the absorption model.

引用

页码：425 / 436

页数：12

共 12 条

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[10]

SVANTESSON KG, UNPUBLISHED

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