OXIDATION OF SI AND GAAS IN AIR AT ROOM-TEMPERATURE

[1] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) : 619 - 622

[2] ATALLA MM, 1960, PROPERTIES ELEMENTAL, P163

[3] LUKES F, 1970, OPTIK, V31, P83

[4] THERMAL OXIDATION OF GALLIUM ARSENIDE [J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1968, 18 (02) : 266 - &

[5] KINETICS AND PRESSURE DEPENDENCE OF SURFACE CONTROLLED METAL OXIDATION REACTIONS [J]. SURFACE SCIENCE, 1969, 15 (03) : 524 - &

[6] SLADKOVA J, 1963, CZECH J PHYS B, V13, P542

[1] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) : 619 - 622

[2] ATALLA MM, 1960, PROPERTIES ELEMENTAL, P163

[3] LUKES F, 1970, OPTIK, V31, P83

[4] THERMAL OXIDATION OF GALLIUM ARSENIDE [J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1968, 18 (02) : 266 - &

[5] KINETICS AND PRESSURE DEPENDENCE OF SURFACE CONTROLLED METAL OXIDATION REACTIONS [J]. SURFACE SCIENCE, 1969, 15 (03) : 524 - &

[6] SLADKOVA J, 1963, CZECH J PHYS B, V13, P542