CATHODOLUMINESCENCE FROM EPITAXIAL DIAMOND LAYER GROWN BY PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION ON HIGH-PRESSURE SYNTHETIC DIAMOND

Cathodoluminescence (CL) spectra and images of an epitaxial diamond layer grown by microwave plasma-assisted chemical vapor deposition (CVD) on high-pressure synthetic (HP) diamond were measured. The epitaxial layer was grown using carbon monoxide (CO) and hydrogen (H-2) on a (111)-oriented HP diamond where lattice planes of (131BAR), (010), and (141) came together at one corner. On the (111) and (010) planes, band A centered at 420 nm and 520 nm was dominant. The color centers related to nitrogen (533.2 nm; 2.34 eV, 575.9 nm; 2.16 eV) and silicon (739 nm; 1.68 eV) were observed on the (131BAR) and (141) planes, The CL images were also observed.