EFFECTS OF UNIAXIAL-STRESS ON SELF-TRAPPED EXCITONS IN RBI

被引：10

作者：

NISHIMURA, H

TSUJIMOTO, T

MORIMOTO, S

NAKAYAMA, M

机构：

[1] Department of Applied Physics, Osaka City University, Sumiyoshi-ku, Osaka

来源：

JOURNAL OF LUMINESCENCE | 1994年 / 58卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(94)90433-2

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Spectral changes of three self-trapped exciton luminescence bands (sigma, pi and Ex bands) in RbI have been investigated under uniaxial compressive stress. The pi band weakens and the Ex band grows markedly under stress, accompanied by drastic changes of decay curves. The results are discussed in terms of a stress-induced change of the potential barrier between the pi and Ex states.

引用

页码：347 / 349

页数：3

共 6 条

[1]

Fischbach J. U., 1973, Journal of Luminescence, V6, P29, DOI 10.1016/0022-2313(73)90092-6

[2]

Kan'no K., 1990, Reviews of Solid State Science, V4, P383

[3]

Kayanuma Y., 1990, Reviews of Solid State Science, V4, P403

[4] HIGH-PRESSURE EFFECTS ON SELF-TRAPPED EXCITONS IN RBI [J].