NANOMETER-SCALE FIELD-INDUCED OXIDATION OF SI(111)H BY A CONDUCTING-PROBE SCANNING FORCE MICROSCOPE - DOPING DEPENDENCE AND KINETICS

被引：115

作者：

TEUSCHLER, T ^{[1
]}

MAHR, K ^{[1
]}

MIYAZAKI, S ^{[1
]}

HUNDHAUSEN, M ^{[1
]}

LEY, L ^{[1
]}

机构：

[1] HIROSHIMA UNIV,DEPT ELECT ENGN,HIGASHIHIROSHIMA 724,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 21期

关键词：

D O I：

10.1063/1.114861

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogen-terminated Si(111) was patterned on the nanometer scale by field-induced oxidation using a biased conducting-probe scanning force microscope. The kinetics of oxide growth as well as its dependence on doping are investigated. Field-induced oxidation is observed for voltages exceeding a doping dependent threshold above which oxidation kinetics follows a power law. (C) 1995 American Institute of Physics.

引用

页码：3144 / 3146

页数：3

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