MEASUREMENT OF MOSFET CONSTANTS

被引：50

作者：

DELAMONEDA, FH

KOTECHA, HN

SHATZKES, M

机构：

[1] IBM CORP,FED SYST DIV,MANASSAS,VA 22110

[2] IBM CORP,GEN TECHNOL DIV,HOPEWELL JUNCTION,NY 12533

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 01期

关键词：

D O I：

10.1109/EDL.1982.25456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：10 / 12

页数：3

共 6 条

[1] A NEW METHOD TO DETERMINE MOSFET CHANNEL LENGTH
CHERN, JGJ
CHANG, P
MOTTA, RF
GODINHO, N
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 170 - 173
[2] ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN
MERCKEL, G
BOREL, J
CUPCEA, NZ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 681 - +
[3] SABNIS AG, 1979 IEDM TECH DIG, P18
[4] EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS
SUCIU, PI
JOHNSTON, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) : 1846 - 1848
[5] WHITE MH, 1980, IEEE T ELECTRON DEVI, V24, P899
[6] YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2