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PLASMA TIME IN SEMICONDUCTOR DETECTORS

被引：34
作者：
QUARANTA, AA
TARONI, A
ZANARINI, G
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1968年 / NS15卷 / 03期
关键词：
D O I：
10.1109/TNS.1968.4324961
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：373 / +
页数：1
相关论文
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NUCLEAR INSTRUMENTS & METHODS, 1963, 22 (02) :189-200
[2]  
DEARNALEY G, 1963, SEMICONDUCTOR COUNTE
[3]   TRANSIENT RESPONSE OF SURFACE BARRIER DETECTORS AS A FUNCTION OF FISSION FRAGMENT ENERGY [J].
KRULISCH, AH ;
AXTMANN, RC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (04) :58-+
[4]   STUDIES OF RESPONSE SPEED OF SILICON SURFACE BARRIER DETECTORS WHEN IRRADIATED WITH DIFFERENT PARTICLES [J].
MEYER, H .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (03) :180-+
[5]  
QUARANTA AA, 1967, SOLID STATE COMMUN, V5, P747
[6]  
QUARANTA AA, 1965, PHYS LETT, V17, P102
[7]  
QUARANTA AA, 1967, NUCL INSTRUM METHODS, V57, P131
[8]  
QUARANTA AA, TO BE PUBLISHED
[9]   PLASMA EFFECTS IN SEMICONDUCTOR DETECTORS [J].
TOVE, PA ;
SEIBT, W .
NUCLEAR INSTRUMENTS & METHODS, 1967, 51 (02) :261-+
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