LINEARITY ... OF VALENCE-BAND DISCONTINUITY IN HETEROJUNCTIONS WITH TE-BASED II-VI SEMICONDUCTORS - CDTE, HGTE, AND ZNTE - REPLY

被引：2

作者：

BASTARD, G

机构：

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 60卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.60.2561

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：2561 / 2561

页数：1

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[1] LINEARITY (COMMUTATIVITY AND TRANSITIVITY) OF VALENCE-BAND DISCONTINUITY IN HETEROJUNCTIONS WITH TE-BASED II-VI SEMICONDUCTORS - CDTE, HGTE, AND ZNTE [J].

DUC, TM ;

HSU, C ;

FAURIE, JP .

PHYSICAL REVIEW LETTERS, 1987, 58 (11) :1127-1130

[2] ANOMALOUS CONFINEMENT EFFECTS IN HGTE-CDTE SUPERLATTICES [J].

JAROS, M ;

ZORYK, A ;

NINNO, D .

PHYSICAL REVIEW B, 1987, 35 (15) :8277-8280

[3] LINEARITY ... OF VALENCE-BAND DISCONTINUITY IN HETEROJUNCTIONS WITH TE-BASED II-VI SEMICONDUCTORS - CDTE, HGTE, AND ZNTE - COMMENT [J].

JAROS, M .

PHYSICAL REVIEW LETTERS, 1988, 60 (24) :2560-2560