PRECIPITATION BEHAVIOR OF NICKEL IN SILICON

被引：79

作者：

SEIBT, M ^{[1
]}

SCHROTER, W ^{[1
]}

机构：

[1] SONDERFORSCHUNGSBEREICH,D-3400 GOTTINGEN,FED REP GER

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1989年 / 59卷 / 02期

关键词：

D O I：

10.1080/01418618908205063

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：337 / 352

页数：16

共 20 条

[1] AUGUSTUS PD, 1983, I PHYS C SER, V67, P229
[2] AUGUSTUS PD, 1983, P C DEFECTS SILICON, P414
[3] A KINETIC-MODEL FOR SOLID-STATE SILICIDE NUCLEATION
BENE, RW
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1826 - 1833
[4] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE
CHERNS, D
ANSTIS, GR
HUTCHISON, JL
SPENCE, JCH
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05): : 849 - 862
[5] THE ATOMIC-STRUCTURE OF THE NISI2-(001)SI INTERFACE
CHERNS, D
HETHERINGTON, CJD
HUMPHREYS, CJ
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 49 (01): : 165 - 177
[6] CHRISTIAN JW, 1975, TRANSFORMATION MET 1, P264
[7] FOLL H, 1982, PHILOS MAG A, V45, P31, DOI 10.1080/01418618208243901
[8] Gibson J. M., 1983, MATER RES SOC S P, V14, P395
[9] GRAFF K, 1981, SEMICONDUCTOR SILICO, P331
[10] HETHERINGTON CJD, 1983, I PHYSICS C SERIES, V67, P89