UTILIZATION OF MOS GATE STRUCTURE FOR CAPACITIVE CHARGE DIVISION READOUT OF SILICON STRIP DETECTOR

被引：6

作者：

TAJIMA, H ^{[1
]}

NAKAMURA, M ^{[1
]}

NAKANISHI, S ^{[1
]}

NIWA, K ^{[1
]}

TANAKA, H ^{[1
]}

YAMAMOTO, K ^{[1
]}

机构：

[1] HAMAMATSU PHOTON KK,DIV SOLID STATE,HAMAMATSU,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1990年 / 288卷 / 2-3期

关键词：

D O I：

10.1016/0168-9002(90)90149-Z

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have developed a new method to supply bias voltage to the floating strips of a silicon strip detector by utilizing MOS gate structure. The voltage of the floating strips is controlled by the voltage of the MOS gate. © 1990.

引用

页码：536 / 540

页数：5

共 4 条

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1988, 270 (01) :42-55

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