Processing, properties and microstructure of melt-processed Bi-2212 thick films

被引：15

作者：

Buhl, D. ^{[1
]}

Lang, Th. ^{[1
]}

Heeb, B. ^{[1
]}

Gauckler, L. J. ^{[1
]}

机构：

[1] ETH, CH-8092 Zurich, Switzerland

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 1994年 / 235-40卷

关键词：

D O I：

10.1016/0921-4534(94)91226-2

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bi-2212 thick films were produced by tape casting and partial melting on Ag-substrates. Highly aligned, almost single-phase microstructures throughout the oxide thickness of 20 mu m were achieved. Optimizing the processing parameters to increase the critical current density j(c) lead to current densities of 18'000 A/cm(2) at 77K/0T and 350'000 A/cm(2) at 4K/0T (1 mu V/cm criterion, magnetically measured). In this paper the influence of the processing parameters on microstructure and properties of the thick films is discussed.

引用

页码：3399 / 3400

页数：2

共 6 条

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