NON-DESTRUCTIVE DETERMINATION OF FREE CARRIER DENSITY OF EPITAXIAL LAYERS OF GASB BY IR REFLECTIVITY MEASUREMENT

被引：14

作者：

SCHIRAR, S ^{[1
]}

BAYO, L ^{[1
]}

MELOUAH, A ^{[1
]}

BOUGNOT, J ^{[1
]}

LLINARES, C ^{[1
]}

MONTANER, A ^{[1
]}

GALTIER, M ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,DYNAM PHASES CONDENSEES GRP,F-34060 MONTPELLIER,FRANCE

来源：

THIN SOLID FILMS | 1987年 / 155卷 / 01期

关键词：

D O I：

10.1016/0040-6090(87)90458-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SEMICONDUCTING GALLIUM COMPOUNDS

引用

页码：125 / 132

页数：8

共 13 条

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HOROWITZ G, 1977, PHYS STATUS SOLIDI A, V39, P533, DOI 10.1002/pssa.2210390221

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MANASEVIT HM, 1979, J ELECTROCHEM SOC, V126, P2031, DOI 10.1149/1.2128849

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MELOUAH A, 1985, THESIS USTL MONTPELL

[10]

MOSS TS, 1973, SEMICONDUCTOR OPTOEL, P347

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