STATISTICAL-MODEL OF SPUTTERING

被引：26

作者：

SCHWARZ, SA

HELMS, CR

机构：

[1] Stanford Electronics Laboratories, Stanford University, Stanford

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 08期

关键词：

D O I：

10.1063/1.326603

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An elementary statistical model of sputtering based on simple geometrical considerations is described. A useful equation for relative sputtering yields is derived which accurately predicts variations with ion energy, mass, and incident angle over a broad range of these parameters. An empirical relation for the absolute sputtering yields is also deduced. Several comparisons are made to experimental and theoretical work in the literature.

引用

页码：5492 / 5499

页数：8

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