OPTICAL PHONONS IN RESONANT TUNNELING

被引：5

作者：

RUDBERG, BGR

机构：

[1] Inst. of Theor. Phys., Chalmers Univ. Technol., Goteborg

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 04期

关键词：

D O I：

10.1088/0268-1242/5/4/009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of electron-phonon interaction on resonant tunnelling has been calculated. This interaction gives a phonon shoulder in the current-voltage characteristic also seen by Goldman and co-workers. The scattering also leads to a decreased peak-to-valley ratio, which can be rather large for II-VI materials. The model used is a microscopic model based on perturbation theory.

引用

页码：328 / 332

页数：5

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