EFFECT OF STRESS ON THE ACCEPTOR GROUND-STATE IN GERMANIUM

被引:12
作者
BUCZKO, R [1 ]
BLINOWSKI, J [1 ]
CHROBOCZEK, JA [1 ]
机构
[1] UNIV WARSAW,INST THEORET PHYS,PL-00681 WARSAW,POLAND
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 01期
关键词
D O I
10.1088/0022-3719/13/1/011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:71 / 83
页数:13
相关论文
共 27 条
[1]  
BADLERESCHI A, 1976, 13 P INT C PHYS SEM, P595
[2]   INTER-VALENCE-BAND TRANSITIONS IN UNIAXIALLY STRESSED GE AND GAAS [J].
BALSLEV, I .
PHYSICAL REVIEW, 1969, 177 (03) :1173-&
[3]   THEORY OF BINDING-ENERGIES OF ACCEPTORS IN SEMICONDUCTORS [J].
BERNHOLC, J ;
PANTELIDES, ST .
PHYSICAL REVIEW B, 1977, 15 (10) :4935-4947
[4]  
BIMBERG D, 1979, SEMICONDUCTORS 1978, P403
[5]  
BIR GL, 1962, SOV PHYS-SOL STATE, V3, P2221
[6]  
BIR GL, 1972, SIMMETRYA DEFORMATIO
[7]   FAR IR PHOTOCONDUCTIVITY SPECTRUM OF ZEEMAN-SPLITTING OF AL ACCEPTOR LEVELS IN GE (B PARALLEL TO [001] AND B PARALLEL TO [110]) [J].
BROECKX, J ;
CLAUWS, P ;
VENNIK, J .
SOLID STATE COMMUNICATIONS, 1978, 25 (08) :613-615
[8]   MAGNETOTHERMAL CONDUCTIVITY OF P-TYPE GERMANIUM [J].
CHALLIS, LJ ;
HASELER, SC ;
RAMDANE, A .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (23) :4695-4706
[9]  
Chroboczek J., 1979, Physics of Semiconductors 1978, P935
[10]  
CHROBOCZEK J, 1977, POST FIZ, V28, P553