OPTIMIZATION OF ANNEALING TEMPERATURE FOR YBA2CU3O7 THIN-FILMS POSTANNEALED AT A LOW OXYGEN PARTIAL-PRESSURE

被引：7

作者：

MOGROCAMPERO, A

TURNER, LG

机构：

[1] GE Research and Development Center, Schenectady, 12301, New York

来源：

JOURNAL OF SUPERCONDUCTIVITY | 1991年 / 4卷 / 04期

关键词：

SUPERCONDUCTING FILMS; YBA2CU3O7; ANNEALING TEMPERATURE; LAALO3;

D O I：

10.1007/BF00618149

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Post-annealing of YBa2Cu3O7 (YBCO) thin films is usually performed at 850-900-degrees-C in atmospheric-pressure oxygen. In this study, coevaporated YBCO films on LaAlO3 were post-annealed in an oxygen partial pressure of 29 Pa at temperatures in the range 700-825-degrees-C. Zero resistance transition temperatures were 89-90 K. Both d.c. (room-temperature resistance and critical current density) and a.c. parameters (extracted from eddy-current response measurements at 25 MHz) were monitored. The optimum temperature is close to 750-degrees-C, which is on the YBCO thermodynamic stability line at this low oxygen partial pressure.

引用

页码：279 / 282

页数：4

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