RELAXATION MECHANISMS OF ELECTRONIC EXCITATION IN NANOSTRUCTURES OF POROUS SILICON

被引：10

作者：

DITTRICH, T ^{[1
]}

KASHKAROV, PK ^{[1
]}

KONSTANTINOVA, EA ^{[1
]}

TIMOSHENKO, VY ^{[1
]}

机构：

[1] MOSCOW MV LOMONOSOV STATE UNIV,DEPT PHYS,MOSCOW 119899,RUSSIA

来源：

THIN SOLID FILMS | 1995年 / 255卷 / 1-2期

关键词：

CHARGING; LUMINESCENCE; NANOSTRUCTURES; SILICON;

D O I：

10.1016/0040-6090(94)05609-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature dependence of porous silicon (PS) photoluminescence and the dependence of the contact potential difference (CPD) in the dark after illumination on the photon energy were investigated for as-anodized PS and for PS oxidized in air for various times after anodization and HF treatment. The effect of the temperature-induced red shift (with decreasing temperature) decreases with increasing HF treatment time and is discussed under the assumption of different lifetimes for radiative and non-radiative recombination. Various photon energy thresholds could be observed by CPD, indicating the role of charge carrier injection in the PS properties.

引用

页码：74 / 76

页数：3

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