ELECTRICAL CONDUCTIVITY AND SURFACE LAYER FORMATION IN SEMICONDUCTING AS50TE45I5

被引：6

作者：

JOHNSON, RT

QUINN, RK

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(71)90529-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：393 / &

共 16 条

[1] Bagley B. G., 1970, Journal of Non-Crystalline Solids, V2, P155, DOI 10.1016/0022-3093(70)90131-6
[2] ELECTRICAL CONDUCTION ANOMALY OF SEMICONDUCTING GLASSES IN THE SYSTEM AS-TE-I
EATON, DL
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1964, 47 (11) : 554 - 558
[3] RADIOACTIVE DECAY AND ASSOCIATED ELECTRICAL CHANGES IN FAST-NEUTRON-IRRADIATED CDS
JOHNSON, RT
KENNA, BT
[J]. PHYSICAL REVIEW, 1969, 182 (03): : 851 - &
[4] EXPERIMENT ON MEMORY DIODE IN AMORPHOUS SEMICONDUCTOR
KINOSHITA, A
AONO, T
NAKANO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (04) : 411 - +
[5] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS
LECOMBER, PG
SPEAR, WE
[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (08) : 509 - &
[6] CONDUCTIVITY OF ELECTRICALLY SWITCHING CHALCOGENIDE GLASS
MALE, JC
[J]. ELECTRONICS LETTERS, 1970, 6 (04) : 91 - &
[7] NORTHROP DC, PRIVATE COMMUNICATIO
[8] PANUS VR, 1967, IZV AKAD NAUK SSS NM, V3, P1910
[9] Pearson A. D., 1970, Journal of Non-Crystalline Solids, V2, P1, DOI 10.1016/0022-3093(70)90115-8
[10] PEARSON AD, 1962, ADVANCES GLASS TECHN, P357