DISLOCATION STRUCTURE AND MACROSCOPIC CHARACTERISTICS OF PLASTIC DEFORMATION AT CREEP OF SILICON CRYSTALS

被引：47

作者：

MYSHLYAEV, MM

NIKITENKO, VI

NESTERENKO, VI

机构：

[1] Institute of Solid State Physics, Academy of Sciences of the Ussr

来源：

PHYSICA STATUS SOLIDI | 1969年 / 36卷 / 01期

关键词：

D O I：

10.1002/pssb.19690360108

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It has been proved that the creep curve of silicon crystals under uniaxial compression at 2 to 15 kp/mm2 and 900 to 1300 °C consists of five characteristic portions, each of them exhibiting a typical dislocation structure. The stationary stage is characterized by misoriented subgrains. The stationary creep rate at stresses up to 10 kp/mm2 is governed by the kinetic equation (Formula Presented.) and controlled by barriers associated with dislocations in the subboundaries. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：89 / +

页数：1

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