POLARIZED MEMORY EFFECT IN THE DEVICE INCLUDING THE ORGANIC CHARGE-TRANSFER COMPLEX, COPPER-TETRACYANOQUINODIMETHANE

被引：51

作者：

SATO, C ^{[1
]}

WAKAMATSU, S ^{[1
]}

TADOKORO, K ^{[1
]}

ISHII, K ^{[1
]}

机构：

[1] GAKUSHUIN UNIV,DEPT CHEM,TOSHIMA KU,TOKYO 171,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 12期

关键词：

D O I：

10.1063/1.346832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The polarized memory effect, in which the switching between the on and off states depends on the polarity of the bias voltage, was found in the device including the film of the organic charge-transfer complex, copper-tetracyanoquinodimethane (Cu-TCNQ). The device consists of three layers, Al/Cu-TCNQ/Cu. The dc I-V characteristics and the dielectric behaviour up to 10(6) Hz were studied. The number of the charge carriers which make the dielectric response below 10(3) Hz increases in the on state. The mechanism of the switching is briefly discussed.

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页码：6535 / 6537

页数：3

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