VERY LOW CURRENT THRESHOLD GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：54

作者：

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 01期

关键词：

D O I：

10.1063/1.91297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：11 / 14

页数：4

共 20 条

[1]

CASEY HC, 1978, J APPL PHYS, V49, P3684, DOI 10.1063/1.325421

[2] SEMICONDUCTOR-LASERS WITH A THIN ACTIVE LAYER (GREATER-THAN 0.1 MU-M) FOR OPTICAL COMMUNICATIONS [J].

CHINONE, N ;

NAKASHIMA, H ;

IKUSHIMA, I ;

ITO, R .

APPLIED OPTICS, 1978, 17 (02) :311-315

[3] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735

[4] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GAAS-AL-XGA-1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

DIXON, RW ;

CASEY, HC ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :501-503

[5] VERY LOW THRESHOLD GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METAL ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :473-475

[6] THRESHOLD REDUCTION BY ADDITION OF PHOSPHORUS TO TERNARY LAYERS OF DOUBLE-HETEROSTRUCTURE GAAS LASERS [J].

DYMENT, JC ;

NASH, FR ;

HWANG, CJ ;

ROZGONYI, GA ;

HARTMAN, RL ;

MARCOS, HM ;

HASZKO, SE .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :481-484

[7]

Henshall G. D., 1977, Solid-State Electronics, V20, P595, DOI 10.1016/0038-1101(77)90097-1

[8] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

ILEGEMS, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1278-1287

[9]

ILEGEMS M, 1975, 5TH P INT S GAAS REL, P1

[10]

ILEGEMS M, UNPUBLISHED

← 1 2 →